Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
Research output: Contribution to journal › Journal article › Research › peer-review
Udgivelsesdato: 2008
Original language | English |
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Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 1 |
Pages (from-to) | 012119 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2008 |
- Faculty of Science - Nanowires, Semiconductor, Molecular Beam Epitaxy, Indium Arsenide
Research areas
ID: 9513620