Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing
Research output: Contribution to journal › Conference article › Research › peer-review
Using in-situ scanning tunneling microscopy (STM) we have investigated the evolution of Si(111)-7×7 surfaces, prepared under ultrahigh vacuum condition, upon Ar+ion sputtering and subsequent annealing. We have monitored how the surface atomic arrangement changes upon annealing of the sputtered Si(111)-7×7 surface. Sputtering renders the Si(111)-7×7 surface amorphous and rough. Annealing at 500 C causes no recrystallization, although the surface roughness is reduced. When the sample is annealed at 600 C, recrystallization starts producing short-range orders. Flat-top nanoislands with a height distribution appear. The top surface of these nanoislands is ordered; most islands have Si(111)-7×7 surface reconstruction, while there are also islands with other surface reconstructions, such as 5×5, 2×2 etc. Smaller silicon nanodots grow at the edges of these flat-top islands.
Original language | English |
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Journal | Materials Today: Proceedings |
Volume | 47 |
Pages (from-to) | 1617-1620 |
DOIs | |
Publication status | Published - 2021 |
Event | 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020 - New Delhi, India Duration: 5 Nov 2020 → 6 Nov 2020 |
Conference
Conference | 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020 |
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Country | India |
City | New Delhi |
Period | 05/11/2020 → 06/11/2020 |
Bibliographical note
Funding Information:
JCM and DD were supported by CSIR Fellowships [09/080(0674)/2009-EMR-I] and [09/080(0725)/2010-EMR-I] respectively. This work was carried out in BND’s laboratory when JCM, DD, RB, AR and BND were all at Indian Association for the Cultivation of Science, Kolkata, India.
Publisher Copyright:
© 2021 Elsevier Ltd. All rights reserved.
- Nanodots, Scanning tunneling microcopy, Self-organized epitaxial nanostructure
Research areas
ID: 306675439