Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing

Research output: Contribution to journal › Conference article › Research › peer-review

Standard

Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing. / Mahato, J. C.; Das, D.; Batabyal, R.; Roy, Anupam; Dev, B. N.

In: Materials Today: Proceedings, Vol. 47, 2021, p. 1617-1620.

Research output: Contribution to journal › Conference article › Research › peer-review

Harvard

Mahato, JC, Das, D, Batabyal, R, Roy, A & Dev, BN 2021, 'Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing', Materials Today: Proceedings, vol. 47, pp. 1617-1620. https://doi.org/10.1016/j.matpr.2021.04.319

APA

Mahato, J. C., Das, D., Batabyal, R., Roy, A., & Dev, B. N. (2021). Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing. Materials Today: Proceedings, 47, 1617-1620. https://doi.org/10.1016/j.matpr.2021.04.319

Vancouver

Mahato JC, Das D, Batabyal R, Roy A, Dev BN. Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing. Materials Today: Proceedings. 2021;47:1617-1620. https://doi.org/10.1016/j.matpr.2021.04.319

Author

Mahato, J. C. ; Das, D. ; Batabyal, R. ; Roy, Anupam ; Dev, B. N. / Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing. In: Materials Today: Proceedings. 2021 ; Vol. 47. pp. 1617-1620.

Bibtex

@inproceedings{196ecba760f2434883f1772e6261f294,
title = "Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing",
abstract = "Using in-situ scanning tunneling microscopy (STM) we have investigated the evolution of Si(111)-7×7 surfaces, prepared under ultrahigh vacuum condition, upon Ar+ion sputtering and subsequent annealing. We have monitored how the surface atomic arrangement changes upon annealing of the sputtered Si(111)-7×7 surface. Sputtering renders the Si(111)-7×7 surface amorphous and rough. Annealing at 500 C causes no recrystallization, although the surface roughness is reduced. When the sample is annealed at 600 C, recrystallization starts producing short-range orders. Flat-top nanoislands with a height distribution appear. The top surface of these nanoislands is ordered; most islands have Si(111)-7×7 surface reconstruction, while there are also islands with other surface reconstructions, such as 5×5, 2×2 etc. Smaller silicon nanodots grow at the edges of these flat-top islands.",
keywords = "Nanodots, Scanning tunneling microcopy, Self-organized epitaxial nanostructure",
author = "Mahato, {J. C.} and D. Das and R. Batabyal and Anupam Roy and Dev, {B. N.}",
note = "Funding Information: JCM and DD were supported by CSIR Fellowships [09/080(0674)/2009-EMR-I] and [09/080(0725)/2010-EMR-I] respectively. This work was carried out in BND{\textquoteright}s laboratory when JCM, DD, RB, AR and BND were all at Indian Association for the Cultivation of Science, Kolkata, India. Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd. All rights reserved.; 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020 ; Conference date: 05-11-2020 Through 06-11-2020",
year = "2021",
doi = "10.1016/j.matpr.2021.04.319",
language = "English",
volume = "47",
pages = "1617--1620",
journal = "Materials Today: Proceedings",
issn = "2214-7853",
publisher = "Elsevier Limited",

}

RIS

TY - GEN

T1 - Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing

AU - Mahato, J. C.

AU - Das, D.

AU - Batabyal, R.

AU - Roy, Anupam

AU - Dev, B. N.

N1 - Funding Information: JCM and DD were supported by CSIR Fellowships [09/080(0674)/2009-EMR-I] and [09/080(0725)/2010-EMR-I] respectively. This work was carried out in BND’s laboratory when JCM, DD, RB, AR and BND were all at Indian Association for the Cultivation of Science, Kolkata, India. Publisher Copyright: © 2021 Elsevier Ltd. All rights reserved.

PY - 2021

Y1 - 2021

N2 - Using in-situ scanning tunneling microscopy (STM) we have investigated the evolution of Si(111)-7×7 surfaces, prepared under ultrahigh vacuum condition, upon Ar+ion sputtering and subsequent annealing. We have monitored how the surface atomic arrangement changes upon annealing of the sputtered Si(111)-7×7 surface. Sputtering renders the Si(111)-7×7 surface amorphous and rough. Annealing at 500 C causes no recrystallization, although the surface roughness is reduced. When the sample is annealed at 600 C, recrystallization starts producing short-range orders. Flat-top nanoislands with a height distribution appear. The top surface of these nanoislands is ordered; most islands have Si(111)-7×7 surface reconstruction, while there are also islands with other surface reconstructions, such as 5×5, 2×2 etc. Smaller silicon nanodots grow at the edges of these flat-top islands.

AB - Using in-situ scanning tunneling microscopy (STM) we have investigated the evolution of Si(111)-7×7 surfaces, prepared under ultrahigh vacuum condition, upon Ar+ion sputtering and subsequent annealing. We have monitored how the surface atomic arrangement changes upon annealing of the sputtered Si(111)-7×7 surface. Sputtering renders the Si(111)-7×7 surface amorphous and rough. Annealing at 500 C causes no recrystallization, although the surface roughness is reduced. When the sample is annealed at 600 C, recrystallization starts producing short-range orders. Flat-top nanoislands with a height distribution appear. The top surface of these nanoislands is ordered; most islands have Si(111)-7×7 surface reconstruction, while there are also islands with other surface reconstructions, such as 5×5, 2×2 etc. Smaller silicon nanodots grow at the edges of these flat-top islands.

KW - Nanodots

KW - Scanning tunneling microcopy

KW - Self-organized epitaxial nanostructure

U2 - 10.1016/j.matpr.2021.04.319

DO - 10.1016/j.matpr.2021.04.319

M3 - Conference article

AN - SCOPUS:85116399233

VL - 47

SP - 1617

EP - 1620

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

SN - 2214-7853

T2 - 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020

Y2 - 5 November 2020 through 6 November 2020

ER -

ID: 306675439