Three-fold Symmetric Doping Mechanism in GaAs Nanowires
Research output: Contribution to journal › Journal article › Research › peer-review
| Original language | English |
|---|---|
| Journal | Nano Letters |
| Volume | 17 |
| Issue number | 10 |
| Pages (from-to) | 5875-5882 |
| ISSN | 1530-6984 |
| DOIs | |
| Publication status | Published - 6 Oct 2017 |
Bibliographical note
[Qdev]
- GaAs, gallium arsenide, nanowires, self-assisted, molecular beam epitaxy, doping, beryllium
Research areas
ID: 186085173