Stress induced anisotropy of fermi surface in p-GaAs/AlGaAs quantum wells
Research output: Contribution to journal › Journal article › Research › peer-review
| Original language | English |
|---|---|
| Journal | Proc. 8th Int.Conf. High Pressure Semiconductor Physics |
| Issue number | 211 |
| Pages (from-to) | 507-512 |
| Publication status | Published - 1999 |
ID: 188906